BSS127S-7【PDF 2/6 页】MOSFET N CH 600V 50MA SOT23

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BSS127

Maximum Ratings (@T A = +25°C, unless otherwise specified.)

Drain-Source Voltage

Gate-Source Voltage

Characteristic

Symbol

V DSS

V GSS

Value

600

±20

Units

V

V

Continuous Drain Current (Note 5) V GS = 10V

Continuous Drain Current (Note 6) V GS = 10V

Continuous Drain Current (Note 5) V GS = 5V

Continuous Drain Current (Note 6) V GS = 5V

Pulsed Drain Current @ T SP = +25°C (Notes 7)

Steady

State

Steady

State

Steady

State

Steady

State

T A = +25°C

T A = +70°C

T A = +25°C

T A = +70°C

T A = +25°C

T A = +70°C

T A = +25°C

T A = +70°C

I D

I D

I D

I D

I DM

50

40

70

55

45

35

65

50

0.16

mA

mA

mA

mA

A

Thermal Characteristics

Characteristic

Power Dissipation, @T A = +25°C (Note 5)

Thermal Resistance, Junction to Ambient @ T A = +25°C (Note 5)

Power Dissipation, @T A = +25°C (Note 6)

Thermal Resistance, Junction to Ambient @ T A = +25°C (Note 6)

Operating and Storage Temperature Range

Symbol

P D

R θ JA

P D

R θ JA

T J , T STG

Value

0.61

204

1.25

100

-55 to +150

Units

W

°C/W

W

°C/W

°C

Electrical Characteristics (@T A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current T J = +25°C

Gate-Body Leakage

BV DSS

I DSS

I GSS

600

—

—

—

—

—

—

0.1

±100

V

μA

nA

V GS = 0V, I D = 250μA

V DS = 600V, V GS = 0V

V GS = ±20V, V DS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

V GS(th)

R DS(ON)

|Y fs |

V SD

3

—

—

—

—

—

80

95

76

—

4.5

160

190

—

1.5

V

?

mS

V

V DS = V GS , I D = 250μA

V GS = 10V, I D = 16mA

V GS = 5.0V, I D = 16mA

V DS = 10V, I D = 16mA

V GS = 0V, I S = 16mA

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

C iss

—

21.8

—

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Reverse Recovery Time

Reverse Recovery Charge

C oss

C rss

Q g

Q gs

Q gd

t D(on)

t r

t D(off)

t f

T rr

Q rr

—

—

—

—

—

—

—

—

—

—

—

2.2

0.3

1.08

0.08

0.50

5.0

7.2

28.7

168

131

32

—

—

—

—

—

—

—

—

—

—

—

pF

nC

ns

ns

ns

ns

ns

nC

V DS = 25V, V GS = 0V, f = 1.0MHz

V GS = 10V, V DD = 300V,

I D = 0.01A

V DD = 300V, V GS = 10V,

R GEN = 6 ? ,

I D = 10mA

V R =300 V, I F =0.016 A,

di/dt = 100A/μs

Notes:

5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided.

7. Repetitive rating, pulse width limited by junction temperature, 10μs pulse, duty cycle = 1%.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

BSS127

Document number: DS35476 Rev. 6 - 2

2 of 6

www.diodes.com

January 2013

? Diodes Incorporated

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